Formation of Q-carbon with wafer scale integration
نویسندگان
چکیده
We describe the formation of highly uniform Quenched-carbon (Q-carbon) layers by plasma-enhanced chemical vapor deposition (PECVD) followed low-energy Ar+ ion bombardment to achieve wafer-scale integration Q-carbon films. After PECVD, 9 nm and 20 thick silicon-doped diamond-like carbon (Si-DLC) films showed complete conversion into using 250eV ions via negative biasing. However, this was only partial for 30 Detailed EELS, XPS, Raman, EDS studies were carried out confirm method. discuss mechanism as a result during PECVD thin These biasing are energetic enough create Frenkel defects, which support three-fold coordinated sp2 units in as-deposited sp3 bonded five-atom tetrahedron Q-carbon. This process enhances atomic number density fraction carbon. diamond tetrahedra randomly packed provide easy nucleation sites diamond. If underlying substrate can an epitaxial template growth domain matching epitaxy, then be achieved next-generation novel device manufacturing from diamond-related materials.
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ژورنال
عنوان ژورنال: Carbon
سال: 2022
ISSN: ['0008-6223', '1873-3891']
DOI: https://doi.org/10.1016/j.carbon.2022.06.003